High-Power GaN Amplifiers for SATCOM Applications

COREVO SATCOM GaN Power Amplifiers: Revolutionizing KU Band Applications

Mouser Electronics is now offering COREVO's high-powered GaN on SiC Mimic amplifiers, specifically designed for the 13.75 to 14.5 GHz SATCOM band. These amplifiers provide a breakthrough in size, weight, power, and cost reduction for KU band applications.

High-Powered GaN on SiC Mimic Amplifiers

COREVO's QPA0015, 0016, and 0017 deliver 8, 15, and 25 watts of power respectively, with up to 35 dB small signal gain and up to 35% power added efficiency. These amplifiers are designed for signals from 13.75 to 14.5 GHz but can be used over an extended frequency range of 12.75 to 15.35 GHz to cover the lower KU band and CDL band.

Compact Surface Mount Packages

The amplifiers feature compact surface mount packages with footprints from 7.5 x 4.5 mm to 7.5 x 6 mm, including 50 ohm matched RF ports that simplify the overall design.

GaN on SiC Process: A Game-Changer in KU Band Amplification

COREVO's 0.15 micron GaN on SiC process offers significant advantages over gallium arsenide and other technologies used for KU band amplification. This process has been proven in thousands of devices operating for millions of hours with an exceptionally low failure rate, demonstrating its performance and reliability in real-world scenarios.

High Power Density and Efficiency

GaN offers a higher breakdown voltage and higher current density, contributing to the high power density and high power added efficiency of these amplifiers. The excellent thermal performance of the silicon carbide substrate allows for smaller and lighter heat sinks, resulting in an 80% reduction in design size.

Improved Reliability and Longevity

The improved thermal performance of these amplifiers also reduces device and channel temperature, improving reliability and longevity in demanding applications.

Ideal for SATCOM and DataLink Applications

COREVO's QPA0015, 0016, and 0017 GaN power amplifiers are perfect for SATCOM and DataLink applications, offering a unique combination of high power density, efficiency, and reliability.

Available Now on Mouser.com

COREVO's SATCOM KU band Mimic GaN power amplifiers are available now on Mouser.com, making it easy to integrate these cutting-edge devices into your designs.

Technical Specifications

Part Number Output Power (W) Frequency Range (GHz) Gain (dB) Power Added Efficiency (%)
QPA0015 8 13.75 - 14.5 up to 35 up to 35%
QPA0016 15 13.75 - 14.5 up to 35 up to 35%
QPA0017 25 13.75 - 14.5 up to 35 up to 35%

Satcom Amplifiers
Satcom amplifiers are electronic devices that amplify weak satellite signals to a level that is strong enough for reliable transmission and reception. These amplifiers play a crucial role in satellite communication systems, which are used for various applications such as television broadcasting, mobile communications, navigation, and remote sensing.
Background:
Satellite communication has become an essential part of modern telecommunications. Satellites in orbit around the Earth receive and transmit signals to provide global coverage. However, satellite signals are weak due to the vast distances they travel through space. This is where satcom amplifiers come into play.
Types of Satcom Amplifiers:
  • Low Noise Amplifiers (LNAs): These amplifiers are designed to amplify weak signals while minimizing noise and interference.
  • Power Amplifiers (PAs): These amplifiers are used to increase the power of the signal for transmission.
Key Features:
  • High gain and low noise figure
  • Wide frequency range
  • Low power consumption
  • Compact size and lightweight design
Applications:
  • Satellite television broadcasting
  • Mobile communications (e.g., satellite phones)
  • Navigation systems (e.g., GPS, GLONASS)
  • Remote sensing and Earth observation

Introduction
SATCOM (Satellite Communications) systems rely on high-power amplifiers to transmit signals from the earth station to the satellite and vice versa. Traditionally, these amplifiers have been built using Gallium Arsenide (GaAs) or LDMOS technologies. However, with the increasing demand for higher power density, efficiency, and reliability, GaN (Gallium Nitride) technology has emerged as a promising solution for high-power SATCOM amplifiers.

Benefits of GaN Technology
GaN technology offers several benefits that make it an attractive choice for SATCOM applications:
  • Higher power density: GaN devices can handle higher power levels per unit area, making them more compact and lighter.
  • Improved efficiency: GaN amplifiers exhibit higher power-added efficiency (PAE) compared to traditional technologies, resulting in reduced heat dissipation and increased reliability.
  • Increased bandwidth: GaN devices can operate over a wider frequency range, enabling the use of a single amplifier for multiple frequency bands.

High-Power GaN Amplifier Design Considerations
The design of high-power GaN amplifiers for SATCOM applications requires careful consideration of several factors:
  • Device selection: Choosing the right GaN device with suitable power rating, frequency range, and package type is crucial.
  • Matching networks: Designing proper matching networks to ensure maximum power transfer between the device and the load is essential.
  • Biasing and control: Implementing a stable biasing scheme and control circuitry to regulate the amplifier's operation is vital.
  • Temperature management: Effective thermal management techniques, such as heat sinks or fans, are necessary to maintain the amplifier's operating temperature within safe limits.

GaN Amplifier Topologies for SATCOM
Several GaN amplifier topologies are suitable for SATCOM applications:
  • Class AB: A compromise between efficiency and linearity, making it a popular choice for many SATCOM systems.
  • Class C: Offers high efficiency but may require additional linearization techniques to meet stringent linearity requirements.
  • Doherty amplifier: Provides high efficiency and good linearity, making it an attractive option for modern SATCOM systems.

Challenges and Future Directions
Despite the advantages of GaN technology, several challenges remain:
  • Cost: GaN devices are still more expensive than traditional technologies.
  • Reliability: Ensuring the long-term reliability of GaN amplifiers in harsh SATCOM environments is crucial.
  • Linearization techniques: Developing effective linearization techniques to meet stringent linearity requirements is an ongoing challenge.
Note: The article is written in a general format and can be modified as per the requirement. Also, please note that this is just a sample text and may not be suitable for direct publication without proper editing and fact-checking.

Q1: What is the main advantage of using GaN amplifiers in SATCOM applications? The main advantage of using GaN amplifiers in SATCOM applications is their high power density, which enables smaller and lighter systems while maintaining or improving performance.
Q2: What is the typical frequency range for GaN amplifiers used in SATCOM? The typical frequency range for GaN amplifiers used in SATCOM is from C-band to Ka-band (4-40 GHz), with some applications extending into Q-band and V-band.
Q3: How do GaN amplifiers compare to traditional GaAs amplifiers in terms of power output? GaN amplifiers typically offer higher power output than traditional GaAs amplifiers, especially at higher frequencies, due to their higher electron mobility and breakdown voltage.
Q4: What are the main challenges in designing high-power GaN amplifiers for SATCOM? The main challenges in designing high-power GaN amplifiers for SATCOM include managing heat dissipation, minimizing non-linear effects, and ensuring reliable operation over a wide range of temperatures.
Q5: How do GaN amplifiers impact the overall size and weight of SATCOM systems? GaN amplifiers can significantly reduce the overall size and weight of SATCOM systems by enabling smaller and lighter amplifier designs, which in turn enable more compact system architectures.
Q6: What are the benefits of using GaN amplifiers in phased array antennas for SATCOM? The benefits of using GaN amplifiers in phased array antennas for SATCOM include improved beam steering, increased gain, and enhanced overall system performance.
Q7: Can GaN amplifiers be used in both military and commercial SATCOM applications? Yes, GaN amplifiers can be used in both military and commercial SATCOM applications, offering a common technology platform for multiple markets.
Q8: How do GaN amplifiers affect the linearity of SATCOM systems? GaN amplifiers can have a positive impact on the linearity of SATCOM systems by enabling more linear amplifier designs, which in turn reduce distortion and improve overall system performance.
Q9: What are the reliability concerns associated with GaN amplifiers in SATCOM applications? The reliability concerns associated with GaN amplifiers in SATCOM applications include potential issues related to device degradation, thermal management, and long-term stability.
Q10: Can GaN amplifiers be integrated with other technologies, such as MMICs or FPGAs, for enhanced SATCOM system performance? Yes, GaN amplifiers can be integrated with other technologies, such as MMICs (Monolithic Microwave Integrated Circuits) or FPGAs (Field-Programmable Gate Arrays), to create more advanced and capable SATCOM systems.


Rank Pioneers/Companies Description
1 MACOM Leading provider of high-performance RF, microwave and millimeter wave products, including GaN amplifiers for SATCOM applications.
2 Cree (Wolfspeed) Pioneer in GaN technology, offering a wide range of high-power GaN amplifiers for SATCOM and other RF applications.
3 Qorvo Leading provider of innovative RF solutions, including high-power GaN amplifiers for SATCOM and other applications.
4 Microsemi (now part of Microchip) Offered a range of high-power GaN amplifiers for SATCOM and other RF applications before being acquired by Microchip.
5 Northrop Grumman Leading defense contractor that has developed high-power GaN amplifiers for SATCOM and other RF applications.
6 Lockheed Martin Major defense contractor that has developed high-power GaN amplifiers for SATCOM and other RF applications.
7 Boeing Leading aerospace company that has developed high-power GaN amplifiers for SATCOM and other RF applications.
8 BAE Systems Global defense contractor that has developed high-power GaN amplifiers for SATCOM and other RF applications.
9 Raytheon Technologies Leading aerospace and defense company that has developed high-power GaN amplifiers for SATCOM and other RF applications.
10 United Monolithic Semiconductors (UMS) Specialist in GaN technology, offering high-power GaN amplifiers for SATCOM and other RF applications.


Parameter Description Value/Range
Frequency Range Operating frequency range of the amplifier 3.5 GHz - 6.4 GHz (C-band), 7.9 GHz - 8.4 GHz (X-band)
Power Output Saturated power output of the amplifier Up to 100W, 200W, or 300W depending on configuration
Gain Linear gain of the amplifier 30 dB - 50 dB (depending on frequency and configuration)
Power-Added Efficiency (PAE) Efficiency of the amplifier at saturated output power Up to 40% at 100W, up to 30% at 200W, and up to 20% at 300W
Third-Order Intermodulation (IMD3) Linearity of the amplifier measured by IMD3 -30 dBc or better at 100W, -25 dBc or better at 200W and 300W
Noise Figure (NF) Noise performance of the amplifier 2.5 dB - 4.0 dB depending on frequency and configuration
Input/Output Return Loss Return loss at input/output ports -15 dB or better (VSWR <= 1.5:1)
DC Power Consumption Typical DC power consumption of the amplifier Up to 500W, up to 1000W, or up to 1500W depending on configuration
Temperature Range Operating temperature range of the amplifier -40°C to +85°C (industrial grade)
Size and Weight Physical dimensions and weight of the amplifier Typically around 100mm x 150mm x 30mm, weighing up to 2 kg or more depending on configuration
Connectors and Interface Type of connectors and interface used for input/output ports N-type female or SMA female connectors for RF ports; DC power connector depends on configuration (e.g. Molex, AMP, etc.)