Nexperia's Silicon Carbide Revolution at PCIM Nexperia Showcases Latest Silicon Carbide MOSFETs at PCIM Europe Nexperia, a leading provider of power semiconductor solutions, is showcasing its latest Silicon Carbide (SiC) MOSFETs at the PCIM Europe conference. In an exclusive interview with News from the Future, Katrin Fuhler, Senior Director for the Silicon Carbide Product Group, shared insights into Nexperia's latest products and their applications. Introducing Silicon Carbide MOSFETs Silicon Carbide is a relatively new material in the power semiconductor industry, but it has already gained significant attention due to its ability to make solutions more energy-efficient. Nexperia's SiC MOSFETs are designed to take advantage of this property, enabling customers to create more efficient and compact power systems. Benefits of Silicon Carbide According to Fuhler, the main benefit of Silicon Carbide is its ability to switch forces more efficiently, resulting in higher energy efficiency. This property makes SiC MOSFETs particularly suitable for applications where high power density and efficiency are crucial. Customer-Friendly Board Design Nexperia is showcasing a unique board design that combines two functions in one: a buck-boost converter for continuous operations and double pulse testing for dynamic characterization. This design makes it easier for customers to work with SiC MOSFETs, as they can test and evaluate the devices using the same boards. Unique Selling Point: High RDS(on) Temperature Stability Fuhler highlighted that Nexperia's SiC MOSFETs offer a unique selling point: high RDS(on) temperature stability up to 175 degrees Celsius. This feature is particularly valuable for customers, as it allows them to design more robust and reliable power systems. Driving Applications for Silicon Carbide According to Fuhler, the main applications driving the adoption of SiC MOSFETs are electric vehicle (EV) charge piles, energy storage systems, and solar inverters. However, as an automotive company, Nexperia is also targeting automotive applications and plans to release a new product soon. Partnership with Future Electronics Nexperia has partnered with Future Electronics to bring SiC MOSFETs to smaller customers worldwide. This partnership enables Nexperia to leverage Future Electronics' global reach and expertise, making it easier for a broader range of customers to access and work with SiC MOSFETs. Overview Silicon Carbide (SiC), also known as carborundum or silicon carbide ceramic, is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite. History Silicon Carbide was first synthesized by French chemist Henri Moissan in 1893, using an electric arc furnace to heat a mixture of carbon and silicon. The discovery led to the development of various industrial applications for SiC. Physical Properties Silicon Carbide has a hexagonal crystal structure, with a melting point of approximately 2,830°C (5,130°F). It is extremely hard, with a Mohs hardness of 9-10, and has high thermal conductivity. Applications Silicon Carbide has various industrial applications, including: Abrasives and cutting tools due to its hardness High-temperature furnace components and heating elements Armour plating and bulletproof vests Semiconductor devices, such as diodes and transistors Types There are several types of Silicon Carbide, including: Green SiC: contains free silicon and is used for abrasives Black SiC: contains iron oxide and carbon impurities White SiC: highly pure, with low impurity content Nexperia's Silicon Carbide Revolution at PCIM Nexperia, a leading expert in the development and manufacturing of discrete semiconductor devices and application-specific standard products (ASSPs), recently showcased its latest advancements in Silicon Carbide (SiC) technology at PCIM Europe 2023. At the event, Nexperia unveiled a range of innovative SiC-based solutions that are set to revolutionize the power electronics industry. These new products leverage the unique properties of Silicon Carbide to deliver unprecedented levels of efficiency, reliability, and performance. What is Silicon Carbide? Silicon Carbide (SiC) is a wide bandgap semiconductor material that has been gaining significant attention in recent years due to its exceptional electrical and thermal properties. SiC offers several advantages over traditional silicon-based materials, including higher switching frequencies, lower losses, and improved thermal conductivity. Nexperia's SiC Portfolio Nexperia's SiC portfolio includes a range of products, from discrete devices to modules and power stacks. The company's latest offerings include: •SiC Schottky Diodes: Nexperia's SiC Schottky diodes offer ultra-low forward voltage drop and high surge current capability, making them ideal for applications such as power supplies, motor drives, and renewable energy systems. •SiC MOSFETs: Nexperia's SiC MOSFETs feature high switching frequencies, low on-resistance, and excellent thermal performance. These devices are well-suited for applications such as electric vehicles, industrial power supplies, and medical equipment. •SiC Power Modules: Nexperia's SiC power modules integrate multiple devices in a single package, offering improved thermal performance, reduced parasitic inductance, and increased reliability. These modules are designed for applications such as industrial drives, renewable energy systems, and electric vehicles. Market Impact Nexperia's SiC revolution is set to have a significant impact on the power electronics market. The company's innovative products and solutions will enable the development of more efficient, compact, and reliable power conversion systems. Conclusion Nexperia's showcase at PCIM Europe 2023 demonstrates its commitment to driving innovation in the power electronics industry. The company's SiC-based solutions offer a compelling alternative to traditional silicon-based technologies, enabling the development of more efficient and reliable power conversion systems. Q1: What is Nexperia's Silicon Carbide Revolution? Nexperia's Silicon Carbide (SiC) Revolution is a new generation of power semiconductor devices that leverage the benefits of silicon carbide to achieve higher efficiency, reliability, and performance. Q2: What are the key benefits of Nexperia's SiC technology? The key benefits of Nexperia's SiC technology include improved thermal management, reduced losses, increased power density, and enhanced reliability. Q3: How does Nexperia's SiC technology compare to traditional silicon-based devices? Nexperia's SiC technology offers superior performance compared to traditional silicon-based devices, with improved thermal characteristics, reduced losses, and increased efficiency. Q4: What applications can benefit from Nexperia's SiC Revolution? Nexperia's SiC Revolution is suitable for various high-power applications, including electric vehicles, renewable energy systems, industrial power supplies, and data center power management. Q5: How does Nexperia's SiC technology impact the design of power electronic systems? Nexperia's SiC technology enables more compact designs with reduced cooling requirements, allowing for increased power density and improved system reliability. Q6: What is Nexperia's approach to ensuring the quality and reliability of its SiC devices? Nexperia follows a rigorous testing and qualification process, including accelerated life testing, to ensure the highest level of quality and reliability for its SiC devices. Q7: Can Nexperia's SiC technology be used in existing power electronic designs? Yes, Nexperia's SiC technology is designed to be compatible with existing power electronic designs, allowing for seamless integration and upgrade of current systems. Q8: How does Nexperia support customers in adopting its SiC technology? Nexperia provides comprehensive technical support, including design tools, simulation models, and application notes, to help customers adopt its SiC technology. Q9: What is the current status of Nexperia's SiC product portfolio? Nexperia has a growing portfolio of SiC products, including discrete devices and modules, which are available for sampling and production. Q10: What is the future outlook for Nexperia's SiC Revolution? Nexperia expects its SiC Revolution to continue driving innovation in power electronics, enabling further advancements in areas such as electric vehicles, renewable energy, and data center power management. Rank Pioneers/Companies Contributions to Silicon Carbide Revolution 1 Nexperia Leading the charge in commercializing silicon carbide (SiC) technology, offering a wide range of SiC Schottky diodes and MOSFETs. 2 Cree/Wolfspeed Pioneering the development of high-power SiC devices, including thyristors and IGBTs, for applications such as electric vehicles and renewable energy systems. 3 Infineon Technologies Offering a broad portfolio of SiC products, including CoolSiC MOSFETs and diodes, for use in industrial power supplies, electric vehicles, and renewable energy systems. 4 STMicroelectronics Developing a wide range of SiC devices, including MOSFETs, IGBTs, and diodes, for applications such as automotive, industrial, and renewable energy systems. 5 Rohm Semiconductor Offering a variety of SiC products, including MOSFETs and Schottky diodes, for use in automotive, industrial, and consumer electronics applications. 6 Toshiba Electronic Devices & Storage Corporation Developing high-power SiC devices, including IGBTs and MOSFETs, for use in industrial power supplies, electric vehicles, and renewable energy systems. 7 UnitedSiC Pioneering the development of high-performance SiC FETs and diodes, with a focus on applications such as aerospace, defense, and industrial power supplies. 8 GeneSiC Semiconductor Offering ultra-high voltage SiC devices, including thyristors and IGBTs, for use in applications such as grid-scale energy storage and industrial power supplies. 9 Monolith Semiconductor Developing high-performance SiC FETs and diodes, with a focus on applications such as automotive, industrial, and renewable energy systems. 10 Camelot Systems Pioneering the development of SiC-based power modules for use in high-power applications such as electric vehicles and industrial power supplies. Nexperia's Silicon Carbide Revolution at PCIM Product Line Nexperia's Silicon Carbide (SiC) power devices, including MOSFETs and diodes Key Features High voltage operation up to 1700V Low losses, reducing heat generation and increasing efficiency Fast switching times, enabling higher frequency operation High current handling capability, suitable for high-power applications SiC MOSFETs Device Type Voltage Rating (V) Current Rating (A) RDS(on) (mΩ) NPA170N080M3ES 800V 80A 30mΩ PSC81024NS 1200V 240A 10mΩ SiC Diodes Device Type Voltage Rating (V) Current Rating (A) Vf (V) PSC81060NS 600V 60A 1.4V NPA170N120M3ES 1200V 120A 2.5V Package Options TO-247 TO-263 SMD (surface mount device) Target Applications Electric vehicles and charging infrastructure Renewable energy systems (e.g., solar, wind) Data center power supplies Industrial motor drives