Silicon Carbide MOSFETs Go Mainstream with OnSemi's Release
Breaking News: OnSemi Expands Silicon Carbide Portfolio with Elite SiC Family of MOSFET Power Switches
By Mark Britton, News from the Future
In a significant development that underscores the growing importance of silicon carbide technology in power electronics, OnSemi has announced the expansion of its portfolio with the elite SiC family of silicon carbide MOSFET power switches and associated drivers. This move comes as no surprise to Future Electronics, which has witnessed surging interest from customers seeking to leverage the superior performance of silicon carbide products in a range of applications.
The Rise of Silicon Carbide: A Mainstream Technology
Silicon carbide (SiC) MOSFETs have long been recognized for their potential to outperform traditional silicon-based power devices. With the ability to switch much faster and more efficiently, SiC MOSFETs are particularly well-suited for high-power applications where energy efficiency, reliability, and thermal management are critical.
As the demand for renewable energy sources and electric vehicles continues to grow, the need for advanced power electronics that can meet the stringent performance requirements of these applications has become increasingly pressing. SiC MOSFETs have emerged as a key enabling technology in this context, offering significant advantages over traditional silicon-based solutions.
OnSemi's Elite SiC Family: A New Benchmark for Performance
The elite SiC family of MOSFET power switches and associated drivers from OnSemi represents a major breakthrough in the development of SiC technology. With its exceptional performance characteristics, this new product line is poised to set a new benchmark for the industry.
Key features of the elite SiC family include:
- High-voltage operation: Up to 1700V
- Low on-resistance: As low as 35 mΩ
- Fast switching times: Less than 100 ns
- High thermal efficiency: Junction temperature up to 200°C
Applications and Opportunities
The elite SiC family from OnSemi is expected to find widespread adoption in a range of high-power applications, including:
- Electric vehicle (EV) chargers
- Solar inverters
- Industrial power supplies
- Data center power management systems
As the industry continues to transition towards more efficient and sustainable technologies, the opportunities for SiC-based solutions are expected to grow exponentially.
Conclusion
The expansion of OnSemi's portfolio with the elite SiC family of MOSFET power switches and associated drivers marks a significant milestone in the development of silicon carbide technology. As the demand for high-performance power electronics continues to drive innovation, Future Electronics remains committed to providing its customers with access to the latest advancements in this field.
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| What is Silicon Carbide? |
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. |
| History |
Silicon carbide was first synthesized by French chemist Henri Moissan in 1893. He discovered that when silicon is heated with carbon, it forms a very hard and resistant compound. The name "carborundum" was coined by American inventor Edward Goodrich Acheson in 1892. |
| Properties |
Silicon carbide is known for its exceptional hardness, thermal conductivity, and resistance to corrosion. It has a high melting point (around 2730°C) and is resistant to chemicals. Its crystal structure can be either hexagonal or cubic. |
| Uses |
Silicon carbide is used in various applications, including: |
- Abrasives and polishing agents due to its high hardness
- Refractory materials for high-temperature furnaces
- Electronic components, such as semiconductors and LEDs
- Armor plating and body armor due to its hardness and resistance to penetration
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| Economic Importance |
Silicon carbide is an important material for various industries, including automotive, aerospace, and defense. Its unique properties make it a critical component in many applications. |
| Silicon Carbide MOSFETs Go Mainstream with OnSemi's Release |
| On Semiconductor has announced the release of its first silicon carbide (SiC) MOSFETs, marking a significant milestone in the adoption of this technology. SiC MOSFETs have long been touted as a superior alternative to traditional silicon-based power devices due to their faster switching times, lower losses, and increased thermal efficiency. |
| Advantages of SiC MOSFETs |
| Silicon carbide (SiC) MOSFETs offer several advantages over traditional silicon-based power devices. They have: |
- Faster switching times: SiC MOSFETs can switch on and off at speeds of up to 100 kHz, compared to around 10 kHz for traditional silicon devices.
- Lower losses: SiC MOSFETs have lower conduction and switching losses than traditional silicon devices, resulting in improved efficiency and reduced heat generation.
- Increased thermal efficiency: SiC MOSFETs can operate at higher temperatures than traditional silicon devices, making them ideal for high-power applications.
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| OnSemi's Release |
| On Semiconductor's release of its first SiC MOSFETs marks a significant milestone in the adoption of this technology. The company has announced a range of devices with voltage ratings from 650V to 1200V, and current ratings up to 100A. |
| The release includes: |
- NTH4L065S1B, a 650V SiC MOSFET with a current rating of 75A.
- NTH4L120S1B, a 1200V SiC MOSFET with a current rating of 50A.
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| Target Applications |
| The new SiC MOSFETs from On Semiconductor are targeted at high-power applications such as: |
- Electric vehicles (EVs) and hybrid electric vehicles (HEVs).
- Industrial power supplies.
- Data center power supplies.
- Renewable energy systems, such as solar and wind power.
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| Conclusion |
| The release of On Semiconductor's first SiC MOSFETs marks a significant milestone in the adoption of this technology. With their faster switching times, lower losses, and increased thermal efficiency, SiC MOSFETs are set to revolutionize high-power applications. |
| Q1: What is Silicon Carbide (SiC) and its significance in power electronics? |
Silicon Carbide (SiC) is a wide bandgap semiconductor material that offers higher switching frequencies, lower losses, and improved thermal performance compared to traditional silicon-based devices. |
| Q2: What are Silicon Carbide MOSFETs and their advantages? |
Silicon Carbide (SiC) MOSFETs are power electronic devices that utilize SiC as the semiconductor material. They offer higher efficiency, faster switching times, and improved reliability compared to traditional silicon-based MOSFETs. |
| Q3: What is OnSemi's release of Silicon Carbide MOSFETs and its impact? |
OnSemi's release of Silicon Carbide (SiC) MOSFETs marks a significant milestone in the mainstream adoption of SiC technology. This release offers high-performance, cost-effective solutions for various applications, driving the transition from traditional silicon-based devices. |
| Q4: What are the key features and benefits of OnSemi's Silicon Carbide MOSFETs? |
OnSemi's SiC MOSFETs offer low losses, high switching frequencies, improved thermal performance, and increased reliability. These features enable designers to create more efficient power systems, reducing energy consumption and increasing overall system performance. |
| Q5: What applications can benefit from OnSemi's Silicon Carbide MOSFETs? |
OnSemi's SiC MOSFETs are suitable for various high-power applications, including renewable energy systems, electric vehicles, industrial power supplies, and datacenter power management. |
| Q6: How do Silicon Carbide MOSFETs compare to traditional silicon-based devices in terms of cost? |
Silicon Carbide (SiC) MOSFETs were initially more expensive than traditional silicon-based devices. However, OnSemi's release and increasing competition are driving costs down, making SiC technology more accessible and competitive. |
| Q7: What is the significance of OnSemi's release in terms of industry adoption? |
OnSemi's release marks a significant step towards mainstream adoption of Silicon Carbide (SiC) technology. This move demonstrates the growing acceptance and confidence in SiC devices, paving the way for wider industry adoption. |
| Q8: How do Silicon Carbide MOSFETs impact power system design and efficiency? |
Silicon Carbide (SiC) MOSFETs enable designers to create more efficient power systems by reducing losses, increasing switching frequencies, and improving thermal performance. This leads to smaller, lighter, and more cost-effective designs. |
| Q9: What is the future outlook for Silicon Carbide MOSFETs in the power electronics market? |
The future outlook for Silicon Carbide (SiC) MOSFETs is promising, with increasing adoption expected across various industries. As costs continue to decline and performance improves, SiC technology is likely to become a dominant force in the power electronics market. |
| Q10: How does OnSemi's release of Silicon Carbide MOSFETs benefit customers? |
OnSemi's release offers customers high-performance, cost-effective solutions that enable them to create more efficient power systems. This leads to reduced energy consumption, increased system reliability, and lower overall costs. |
| Rank |
Pioneers/Companies |
Contribution |
| 1 |
ON Semiconductor |
Released a new family of Silicon Carbide (SiC) MOSFETs, marking the beginning of SiC going mainstream. |
| 2 |
Cree Inc. |
Pioneered the development of SiC technology and has been a leading supplier of SiC wafers and devices. |
| 3 |
Infineon Technologies |
Released its own family of SiC MOSFETs, expanding the market for high-power applications. |
| 4 |
Rohm Semiconductor |
Developed a range of SiC power devices, including MOSFETs and Schottky diodes, for industrial and automotive applications. |
| 5 |
STMicroelectronics |
Released its first SiC MOSFETs, targeting high-power applications such as electric vehicles and renewable energy systems. |
| 6 |
Wolfspeed (A Cree Company) |
Offers a range of SiC products, including MOSFETs, diodes, and modules, for high-power applications. |
| 7 |
Littelfuse |
Developed a line of SiC power devices, including MOSFETs and Schottky diodes, for industrial and automotive applications. |
| 8 |
UnitedSiC |
Offers a range of SiC FETs and diodes, targeting high-power applications such as electric vehicles and renewable energy systems. |
| 9 |
GeneSiC Semiconductor |
Developed a line of ultra-high voltage SiC thyristors for grid-scale energy storage and other high-power applications. |
| 10 |
Monolith Semiconductor |
Offers a range of SiC power devices, including MOSFETs and Schottky diodes, for industrial and automotive applications. |
| Silicon Carbide (SiC) MOSFETs Technical Details |
| Parameter |
Description |
| Material |
Silicon Carbide (SiC) |
| Dielectric Material |
Oxidized Silicon Carbide (SiO2) or Aluminum Oxide (Al2O3) |
| Gate Structure |
Trench Gate or Planar Gate |
| Channel Type |
Vertical Double-Diffused MOSFET (VDMOS) or Lateral Power MOSFET |
| Threshold Voltage (Vth) |
-3 V to -5 V (typical value: -4 V) |
| On-Resistance (Rds(on)) |
10 mΩ to 100 mΩ (depending on the device and current rating) |
| Breakdown Voltage (Vbr) |
600 V to 1700 V (depending on the device and application) |
| Leakage Current |
<1 μA (typical value at room temperature) |
| Temperature Range |
-40°C to +175°C (depending on the device and application) |
| Packaging Options |
TO-247, TO-220, SOT-227, or surface-mount packages |
| Fabrication Process |
Planar or trench gate process using SiC wafers with a diameter of up to 150 mm |
| Mask Count |
5-7 mask layers (depending on the device complexity) |
| OnSemi's SiC MOSFET Release Details |
| Parameter |
Description |
| Device Part Number |
NTH60N030S1, NTH80N120S3, or similar |
| Voltage Rating (Vds) |
600 V to 1700 V |
| Current Rating (Ids) |
10 A to 50 A |
| Pulse Current Capability |
Up to 2x the steady-state current rating |
| Switching Speed (t_on/t_off) |
<100 ns for some devices, depending on the application and gate drive conditions |
| Maximum Junction Temperature (Tj) |
175°C (with proper heat sinking) |
| Gate Drive Requirements |
-3 V to -5 V gate voltage, 100 ns rise/fall time |
| RoHS Compliance |
Yes, lead-free and halogen-free packaging options available |
Note: The technical details provided are general information about Silicon Carbide (SiC) MOSFETs and OnSemi's release. Some parameters might be specific to certain devices or applications.
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