TSMC Working on Next-Gen HBM4 Base Dies, Built on 12nm and 5nm Nodes

Technology giant TSMC is reportedly making significant progress in the development of the next-generation High Bandwidth Memory (HBM4) base dies. The new chips are being built on the 12nm and 5nm semiconductor nodes, indicating a significant leap in performance and efficiency.

HBM4 is a high-performance memory technology widely used in advanced graphics cards and data center applications. It offers substantial improvements in bandwidth and power efficiency compared to traditional memory solutions. TSMC's efforts to enhance the base dies of HBM4 chips suggest a further boost in these metrics.

TSMC's 12nm process technology has already been in use for various applications, and the company has received positive reviews for its performance and power characteristics. The shift to a 5nm process node, however, represents a significant advancement that could revolutionize the capabilities of HBM4 memory.

Smaller process nodes allow for increased transistor density, resulting in improved performance, reduced power consumption, and smaller chip sizes. This translates to faster and more efficient memory solutions, ultimately benefiting industries that heavily rely on high-performance computing.

HBM4 base dies built on the 5nm node are expected to offer even higher bandwidth and lower power consumption compared to their 12nm counterparts. This aligns with the increasing demand for memory-intensive applications such as artificial intelligence, machine learning, and high-resolution gaming.

TSMC's commitment to advancing HBM4 technology showcases its dedication to meeting the evolving needs of the industry. By driving innovation in base dies, the company enables manufacturers to deliver cutting-edge graphics cards and data center solutions that push the boundaries of performance and efficiency.

While specific details about the HBM4 base dies are still limited, TSMC's progress on the 12nm and 5nm nodes suggests that next-generation memory solutions are on the horizon. As technology continues to develop at a rapid pace, industry leaders like TSMC play a crucial role in driving advancements and empowering future innovations.
|Q|A| |---|---| |What is one of the major changes coming with HBM4 memory?|The major change is the wider memory interface, moving from a 1024-bit interface to a 2048-bit interface.| |What do chip manufacturers need to do to accommodate the wider memory interface?|Chip manufacturers will need to adopt more advanced packaging methods than currently used.| |What fabrication processes will TSMC use for manufacturing the base dies for HBM4?|TSMC plans to use variations of their N12 and N5 processes.| |Why does TSMC expect to occupy a favorable place in the HBM4 manufacturing process?|Memory fabs are not currently equipped to produce such advanced logic dies, and TSMC's processes are well-suited for this task.| |How will TSMC use the N12FFC+ and N5 processes for connecting memory in high-performance processors?|The N12FFC+ process will be used to install HBM4 memory stacks on a silicon interposer next to SoCs, while the N5 process will provide even more logic with lower power at HBM4 speeds.| |Which memory partners is TSMC working with for HBM4 integration?|TSMC is working with Micron, Samsung, and SK Hynix.| |What is the purpose of integrating HBM4E memory with next-generation AI and HPC processors?|The purpose is to enhance AI and HPC applications' performance by integrating high-bandwidth memory.| |What is the base die made on the N12FFC+ fabrication process used for?|The base die is used to install HBM4 memory stacks on a silicon interposer next to SoCs.| |What memory configurations can TSMC's base die achieve using the N12FFC+ process?|The N12FFC+ process can achieve 12-Hi (48 GB) and 16-Hi (64 GB) stacks, with per-stack bandwidth of over 2 TB/second.| |What is the benefit of using TSMC's N5 base die for HBM4 memory integration?|The N5 base die provides more logic with lower power consumption at HBM4 speeds.|
Of the various significant changes accompanying HBM4 memory, one of the most immediate modifications pertains to the width of the memory interface. Transitioning from the already wide 1024-bit interface of the third-generation memory standard, HBM4 memory stacks will require more advanced packaging methods to accommodate the ultra-wide 2048-bit interface. In its recent European Technology Symposium 2024 presentation, TSMC provided new details regarding the logic processes it will employ to manufacture the base dies for HBM4. TSMC plans to utilize variations of its N12 and N5 processes, anticipating a favorable position in HBM4 manufacturing due to the lack of economically feasible options from memory fabs. TSMC intends to use two fabrication processes, N12FFC+ and N5, to integrate HBM4E memory with next-generation AI and HPC processors. These processes will be employed in distinct ways to connect memory for high-performance processors in AI and HPC applications. TSMC is collaborating with key HBM memory partners, including Micron, Samsung, and SK Hynix, to achieve full stack integration using advanced nodes for HBM4. The N12FFC+ cost-effective base die will be utilized to install HBM4 memory stacks on a silicon interposer alongside system-on-chips (SoCs). TSMC believes that the 12FFC+ process is well-suited for achieving HBM4 performance, enabling memory vendors to construct 12-Hi (48 GB) and 16-Hi stacks (64 GB) with a per-stack bandwidth exceeding 2 TB/second.

According to recent reports, TSMC (Taiwan Semiconductor Manufacturing Company) is actively involved in developing the next-generation High Bandwidth Memory 4 (HBM4) base dies. The company is planning to manufacture these dies using advanced semiconductor process nodes, specifically the 12nm and 5nm nodes.

HBM4 is a cutting-edge type of memory technology that ensures faster and more efficient data transfer rates compared to traditional memory solutions. It is widely used in high-performance applications such as graphics cards, supercomputers, and artificial intelligence systems.

TSMC's decision to develop HBM4 base dies on the 12nm and 5nm nodes signifies their commitment to pushing the boundaries of performance and power efficiency. These advanced process nodes enable TSMC to incorporate more transistors in a smaller area while reducing power consumption, resulting in improved overall performance.

The 12nm process node is an enhancement over previous generations, utilizing FinFET technology to deliver better power efficiency and transistor density. With the 5nm process, TSMC takes it a step further by employing advanced Extreme Ultraviolet (EUV) lithography, which enhances transistor precision and allows for even smaller chip designs.

By leveraging these cutting-edge process nodes, TSMC aims to achieve significant advancements in HBM4 base dies. The company's focus is on maximizing memory bandwidth, reducing latency, and increasing memory capacity to meet the growing demands of high-performance computing and emerging technologies.

TSMC's endeavor to develop HBM4 on the latest process nodes highlights the company's technological prowess and commitment to staying at the forefront of semiconductor manufacturing. With their expertise and innovation, TSMC continues to play a crucial role in enabling advancements in various industries and driving the progress of next-generation technologies.